Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity
Leh Lim
Chee Tan
Jo Ng
Jonathan Petticrew
Andrey Krysa
10.15131/shef.data.6955037.v1
https://orda.shef.ac.uk/articles/dataset/Improved_planar_InAs_avalanche_photodiodes_with_reduced_dark_current_and_increased_responsivity/6955037
<p>Indium Arsenide (InAs) infrared photodiodes
provide high quantum efficiency in the wavelength range of 1.0 to 3.0 µm.
Planar diode configuration has been adopted to reduce surface leakage. In this
work, new fabrication procedures for planar InAs avalanche photodiodes (APDs)
are reported. Beryllium (Be) ions were implanted into InAs at a relatively low
energy of 34 keV. Effects of duration of post implant annealing on the
electrical characteristics of InAs APDs were investigated. It was found that a
combination of post implant annealing at 500 °C for 15 minutes and a
shallow surface etch produces planar APDs with good characteristics (room
temperature dark current density of 0.52 A/cm<sup>2</sup> at -0.2 V and external
quantum efficiency of 51% at 1520 nm at ‑0.3 V). These represent a 3 times reduction
in dark current and 1.4 times increase in responsivity, compared to earlier Be‑implanted
planar InAs APDs. The APDs’ avalanche gain characteristics remain similar to those
from earlier reports, with a gain of 4 at a relatively low operating bias of 5
V. This suggests the potential of integrating InAs APDs with low voltage
readout integrated circuits (ROIC) for development of infrared imaging arrays. The
data reported in this paper is available from the ORDA digital repository (DOI:
10.15131/shef.data.6955037).</p><p></p>
2019-05-01 14:24:19
Avalanche Photodiodes
indium arsenide
Electrical and Electronic Engineering not elsewhere classified