Data and figures related to publication: Improved ambient stability of thermally annealed Zinc Nitride thin films

The data provided here is related to the publication:
"Improved ambient stability of thermally annealed Zinc Nitride thin films"
AIP Advances 10, 035018 (2020); https://doi.org/10.1063/1.5144054

The study reported in this paper was funded by the EPSRC (Fund code EP/M507611/1) and Johson Matthey PLC. The financial support by these parties is highly appreciated.

The data required to reproduce each figure panel is provided in different text files. Columns are separated by a space character. The first line in each column describes the dataset. The complete figures are also included as .tif files.

With the added context of the paper, it should be easy to reproduce the figures.

Figure 1: Transmittance spectra of (a) an as-deposited and (b) an annealed 700 nm Zn3N2 film for up to 18 weeks. (c) Scanning Electron Microscopy image of a partially oxidised Zn3N2 film.

Figure 2:
(a) Refractive index, n, and (b) extinction coefficient, k, of the Zn3n2 layer obtained by spectroscopic ellipsometry for different annealing temperatures.

Figure 3: Thickness of (a) the Zn3N2 layer and (b) oxide layers over several months for annealed samples. (c) Lifetime of the Zn3N2 layer as a function of annealing temperature. The data points marked with * were extrapolated based on the oxidation rates measured in this study.

Figure 4: X-ray diffraction scans of the (400) peak for Zn3N2 samples annealed at different temperatures. The dashed line shows the expected position of the (400) peak based on crystallographic data.