Data for Paper: Modeling Temperature dependent Avalanche Characteristics of InP
2019-10-15T11:35:37Z (GMT) by
The files in this repository correspond to the results shown in the paper, "Modeling Temperature dependent Avalanche Characteristics of InP" published in the IEEE Journal of Lightwave Technology.
The .png files are the figures as in the paper and the .csv and .txt files contain the raw data used to create these figures. The raw probability density data is available in the folders, where the electron data is available in the "electron" folder and the "hole" data is available in the hole folder, each folder is subdivided by temperature.
The naming convention of the raw probability density files is "electric field(kV/cm)"_"e(electron) or h(hole)"_pdf.txt
This paper focuses on a simple monte carlo model for Indium Phosphide avalanche diodes capable of predicting the temperature dependent avalanche gain, and corresponding impact ionization coefficients.