Figures and raw data for the Royal Society Open Science paper. Data already available on Dryad with a DOI.
Abstract: When using avalanche photodiodes (APDs) in applications,
temperature dependence of avalanche breakdown voltage
is one of the performance parameters to be considered.
Hence, novel materials developed for APDs require dedicated
experimental studies. We have carried out such a study on
thin Al1–xGaxAs0.56Sb0.44 p–i–n diode wafers (Ga composition
from 0 to 0.15), plus measurements of avalanche gain and dark
current. Based on data obtained from 77 to 297 K, the alloys
Al1−xGaxAs0.56Sb0.44 exhibited weak temperature dependence
of avalanche gain and breakdown voltage, with temperature
coefficient approximately 0.86–1.08 mV K−1, among the lowest
values reported for a number of semiconductor materials.
Considering no significant tunnelling current was observed at
room temperature at typical operating conditions, the alloys
Al1−xGaxAs0.56Sb0.44 (Ga from 0 to 0.15) are suitable for
InP substrates-based APDs that require excellent temperature
stability without high tunnelling current.