Data for paper: Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys
The files correspond to experimental results in paper: “Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys” DOI: 10.1109/LPT.2016.2601651.
There are two types of files:
-.PNG, which corresponds to the figures
-.CSV, which are raw data in figures
The work in this paper mainly focus on the experiments to accurately determine avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 for x = 0 to 0.15. The test structures were p-i-n diodes with 100 nm avalanche layers to maximize usefulness of the results for high bandwidth APDs. In addition, due to a lack of experimental reports, this work included experimental confirmation of minimum bandgaps, Eg, of Al1-xGaxAs0.56Sb0.44.
The data consists of results from Al1-xGaxAs0.56Sb0.44 avalanche photodiodes (x = 0 to 0.15): photoresponse, dark current, capacitance, bandgap, avalanche gain and breakdown voltage. More details about these data/figures can be found in README file.