Data for paper: Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys
Datasets usually provide raw data for analysis. This raw data often comes in spreadsheet form, but can be any collection of data, on which analysis can be performed.
The files correspond to experimental results in paper: “Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys” DOI: 10.1109/LPT.2016.2601651.
There are two types of files:
-.PNG, which corresponds to the figures
-.CSV, which are raw data in figures
The work in this paper mainly focus on the experiments to accurately determine avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 for x = 0 to 0.15. The test structures were p-i-n diodes with 100 nm avalanche layers to maximize usefulness of the results for high bandwidth APDs. In addition, due to a lack of experimental reports, this work included experimental confirmation of minimum bandgaps, Eg, of Al1-xGaxAs0.56Sb0.44.
The data consists of results from Al1-xGaxAs0.56Sb0.44 avalanche photodiodes (x = 0 to 0.15): photoresponse, dark current, capacitance, bandgap, avalanche gain and breakdown voltage. More details about these data/figures can be found in README file.