Data for paper: Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys
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The files correspond to experimental results in paper: “Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys” DOI: 10.1109/LPT.2016.2601651.
There are two types of files:
-.PNG, which corresponds to the figures
-.CSV, which are raw data in figures
The work in this paper mainly focus on the experiments to accurately determine avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 for x = 0 to 0.15. The test structures were p-i-n diodes with 100 nm avalanche layers to maximize usefulness of the results for high bandwidth APDs. In addition, due to a lack of experimental reports, this work included experimental confirmation of minimum bandgaps, Eg, of Al1-xGaxAs0.56Sb0.44.
The data consists of results from Al1-xGaxAs0.56Sb0.44 avalanche photodiodes (x = 0 to 0.15): photoresponse, dark current, capacitance, bandgap, avalanche gain and breakdown voltage. More details about these data/figures can be found in README file.
Read the peer-reviewed publication
EPSRC grant: EP/K001469/1; EU Marie-Curie Training Network PROMIS Grant: H2020-MSCA-ITN-2014-641899
EthicsThere is no personal data or any that requires ethical approval
PolicyThe data complies with the institution and funders' policies on access and sharing
Sharing and access restrictionsThe data can be shared openly
- The file formats are open or commonly used
Methodology, headings and units
- Headings and units are explained in the files