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Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise

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posted on 2017-07-14, 10:08 authored by Xinxin ZhouXinxin Zhou, Lucas Pinel, Simon Dimler, Shiyong ZhangShiyong Zhang, Jo NgJo Ng, Chee TanChee Tan
The files correspond to experimental results in paper: "Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise" published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, Issue: 2, March-April 2018), DOI: https://doi.org/10.1109/JSTQE.2017.2725441

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- .png, which correspond to the figures
- .csv, which are raw data in figures

This work reports the excess noise characterization in a series of Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.

The data consists of results from Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.


UK Engineering & Physical Sciences Research Council (EP/K001469/1) and European Union H2020 Program (PROMIS, grant number H2020-MSCA-ITN-2014-641899)



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