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Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise

The files correspond to experimental results in paper: "Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise" published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, Issue: 2, March-April 2018), DOI: https://doi.org/10.1109/JSTQE.2017.2725441

There are two types of files:
- .png, which correspond to the figures
- .csv, which are raw data in figures

This work reports the excess noise characterization in a series of Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.

The data consists of results from Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.

Funding

UK Engineering & Physical Sciences Research Council (EP/K001469/1) and European Union H2020 Program (PROMIS, grant number H2020-MSCA-ITN-2014-641899)

History

Ethics

There is no personal data or any that requires ethical approval

Policy

The data complies with the institution and funders' policies on access and sharing

Sharing and access restrictions

The data can be shared openly

Data description

  • The file formats are open or commonly used

Methodology, headings and units

  • There is a readme.txt file describing the methodology, headings and units