Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise
datasetposted on 14.07.2017, 10:08 by Xinxin Zhou, Lucas Pinel, Simon Dimler, Shiyong Zhang, Jo Ng, Chee Tan
The files correspond to experimental results in paper: "Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise" published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, Issue: 2, March-April 2018), DOI: https://doi.org/10.1109/JSTQE.2017.2725441
There are two types of files:
- .png, which correspond to the figures
- .csv, which are raw data in figures
This work reports the excess noise characterization in a series of Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.
The data consists of results from Al1-xGaxAs0.56Sb0.44 (x = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.
UK Engineering & Physical Sciences Research Council (EP/K001469/1) and European Union H2020 Program (PROMIS, grant number H2020-MSCA-ITN-2014-641899)
EthicsThere is no personal data or any that requires ethical approval
PolicyThe data complies with the institution and funders' policies on access and sharing
Sharing and access restrictionsThe data can be shared openly
- The file formats are open or commonly used
Methodology, headings and units
- There is a readme.txt file describing the methodology, headings and units