A GaAsSb/AlGaAsSb Avalanche Photodiode with a very small Temperature Coefficient of Breakdown Voltage
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posted on 19.04.2022, 14:34 by Ye CaoYe Cao, Tarick OsmanTarick Osman, Edmund ClarkeEdmund Clarke, Pallavi PatilPallavi Patil, Jo NgJo Ng, Chee TanChee TanAvalanche photodiodes (APDs) made with the
material AlGaAsSb (lattice-matched to InP) exhibit
very low excess noise characteristics. We demonstrate a Separate Absorption and
Multiplication APD (SAM-APD) incorporating a GaAs0.52Sb0.48
(GaAsSb) absorption region and an Al0.85Ga0.15As0.56Sb0.44
(AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits cut-off
wavelength of 1.70 μm at room temperature and a responsivity of 0.39 A/W at
1.55 μm wavelength (no antireflection coating). Temperature dependence of the
breakdown voltage was obtained from avalanche gain data from multiple devices
operated at 77 to 295 K. This produced a temperature coefficient of breakdown
voltage of 4.31±0.33 mV/K, a factor of 10 and 5 smaller than values for
comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of
this work is consistent with the extremely weak temperature dependence of
avalanche breakdown previously observed in AlGaAsSb diodes.
Funding
UK-Engineering and Physical Sciences Research Council grants (EP/N020715/1 and EP/K001469/1)
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