8 files

A GaAsSb/AlGaAsSb Avalanche Photodiode with a very small Temperature Coefficient of Breakdown Voltage

Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP) exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and Multiplication APD (SAM-APD) incorporating a GaAs0.52Sb0.48 (GaAsSb) absorption region and an Al0.85Ga0.15As0.56Sb0.44 (AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits cut-off wavelength of 1.70 μm at room temperature and a responsivity of 0.39 A/W at 1.55 μm wavelength (no antireflection coating). Temperature dependence of the breakdown voltage was obtained from avalanche gain data from multiple devices operated at 77 to 295 K. This produced a temperature coefficient of breakdown voltage of 4.31±0.33 mV/K, a factor of 10 and 5 smaller than values for comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of this work is consistent with the extremely weak temperature dependence of avalanche breakdown previously observed in AlGaAsSb diodes.


UK-Engineering and Physical Sciences Research Council grants (EP/N020715/1 and EP/K001469/1)



There is no personal data or any that requires ethical approval


The data complies with the institution and funders' policies on access and sharing

Sharing and access restrictions

The data can be shared openly

Data description

  • The file formats are open or commonly used

Methodology, headings and units

  • Headings and units are explained in the files