Collection for Paper: Modeling Temperature dependent Avalanche Characteristics of InP

Ng, Jo

Collection for Paper: Modeling Temperature dependent Avalanche Characteristics of InP

Posted on 2019-10-15 - 12:28 authored by Jonathan Petticrew

The collection correspond to the results and software from the paper, "Modeling Temperature dependent Avalanche Characteristics of InP" published in the IEEE Journal of Lightwave Technology.

This paper focuses on a simple monte carlo model for Indium Phosphide avalanche diodes capable of predicting the temperature dependent avalanche gain, and corresponding impact ionization coefficients.

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Petticrew, Jonathan; Dimler, Simon; Tan, Chee; Ng, Jo (2019). Collection for Paper: Modeling Temperature dependent Avalanche Characteristics of InP. The University of Sheffield. Collection. https://doi.org/10.15131/shef.data.c.4373006.v1

https://doi.org/10.15131/shef.data.c.4373006.v1

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