Data for paper: “Effects of carrier injection profile on low noise thin Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes", L. L.G.Pinel et al. Fig. 1. Cross-sectional schematic diagram (a) and top-view photo (b) of devices fabricated from the n-i-p wafers. (a) Example data of dark current, photocurrent, and deduced gain, obtained from a PIN 1 diode with a radius of 110 um. Fig. 2. (a) Capacitance-Voltage data of 110 um radii diodes of the AlGaAsSb wafers, (b) noise signal versus photocurrent of a Si photodiode measured using different light sources, and (c) dark current versus reverse bias of 110 um radii diodes for all 4 wafers. Fig. 3. Avalanche gain versus reverse bias characteristics of the four wafers, obtained using wavelengths of 633, 543, and 420 nm. 1/M curves are extrapolated to zero to extract Vb. Fig. 4. Excess noise factor versus avalanche gain characteristics of the four wafers, obtained using wavelengths of 633 nm, 543 nm, and 420 nm. Fig. 5. Calculated characteristics of Fe(Me) and Fh(Mh) for w = 100 nm and beta/alpha = 0.5. Ratios of deadspace to avalanche width used are 0, 0.1, 0.2, and 0.3. Fig. 6. Comparison of excess noise factors at avalanche gain ~ 10 of avalanche diodes made with AlGaAsSb (this work), AlAsSb, Al0.3In0.7As0.3Sb0.7, InAlAs, InP, and Si. Table 1. Breakdown voltages, nominal w, and modelled w, capacitance at 0.95Vb (for 110 um radii diodes), and depletion width at 0.95Vb of the four AlGaAsSb wafers.