Data for paper: "Sensitivity Calculations of High-Speed Optical Receivers based on Electron-APDs", V. Shulyay et al. Figure 1. Simulated electron drift velocity of InAs [15] and experimental hole drift velocity of GaAs [16]. Fittings (lines) to these data are used in our simulations of optical receivers based on InAs e-APDs. Figure 2. Calculated mean impulse response for an InAs e-APD with ${w=3.0 \; \mu m}$ reverse biased at 18 V. The different stages of the mean impulse response function are indicated by the dashed lines in the figure. Figure 3. Gain, 3 dB bandwidth, dark current, and sensitivity simulation data for a $w =3.0\; \mu m$ InAs e-APD operated at 10 Gb/s bit rate and $1 \times 10^{-12}$ target BER. Its optimal operating voltage (-18 V) is indicated by the dotted line. Figure 4. Bandwidth versus avalanche gain characteristics of three simulated InAs e-APDs. Unlike other materials, bandwidth does not decrease with gain. Figure 5. Sensitivity versus APD reverse bias as function of avalanche width for 10 Gb/s data rate and $1 \times 10^{-12}$ target BER. Figure 6. Gain-optimized sensitivity for each simulated avalanche width for a ${1 \times 10^{-12}}$ target BER. Figure 7. Variable target BER versus optimum sensitivity for InAs APD-TIA combinations for (a) 1550 nm and (b) 1310 nm wavelength operation. The data rates are 10 (black circles, $w = 3 \;\mu m$), 25 (grey circles, $w = 2.3 \;\mu m$), and 40 Gb/s (open circles, $w = 1.5 \;\mu m$). Other high speed detector systems (other symbols, using identical color scheme for the different bit-rates), such as InAlAs APDs [23], [24], Ge/Si APD [25], and SOA-PIN combinations [26]-[28] are included for comparison.