AlN fraction, x Eg (eV) n at 1700 nm Carrier density, ne (cm^-3) Resistivity (Ohm cm) AlN fraction error Note 0.0000 0.84 Kumagai et al reference 0.0000 1.43 2.6028 2.007170E+19 3.753000E-02 0.000000 this study 0.0892 1.62 2.4557 1.685030E+17 9.557830E+00 0.009990 0.1174 1.87 2.2818 7.269910E+16 3.063859E+01 0.012700 0.1504 2.23 2.2119 4.065520E+17 1.202040E+00 0.015540 0.1910 2.77 2.0294 0.018900