Data for paper: "Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II Superlattice Photodiodes", J. D. Petticrew et al.

The figure files contain the graphical figures and the data behind them. Simulation parameters contains the simulation parameters used in the model implimented in nextnano as part of this work.

Figure 1. Experimental (top) 004 X-Ray diffraction characteristics and fitting (bottom) for wafer A.
Figure 2. Extraction of λ_c using linear regression of η^2 for wafer A (top) and wafer B (bottom).
Figure 3. Comparison between simulated (lines) and experimental (symbols: diamonds [10] and squares [12]) λc for a) a 5 nm/5 nm InGaAs/GaAsSb type-II superlattice using the nextnano default parameters and b) a 5 nm/5 nm InGaAs/GaAsSb type-II superlattice and wafers from this work using a GaAs1-xSbx valence bandoffset of -1.06 eV.
Figure 4. (Top) Simulated wavefunction overlap of lattice matched InGaAs/GaAsSb type-II superlattice with InGaAs thickness of 3 (black), 4 (red), 5 (grey), 6 (green), and 7 nm (white). (Bottom) Empirical linear relationship of maximum wavefunction overlap against cut-off wavelength.
Figure 5. Simulated room temperature λ_c (left, circles) and wavefunction overlap (right, squares) for a 5 nm/3 nm strained InGaAs/GaAsSb type-II superlattice with 125 periods for different GaAsSb compositions.


[10] Uliel et al., doi:10.1016/j.infrared.2017.02.003.
[12] Ong et al., doi:10.1109/TED.2010.2090352